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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BA423AL AM band-switching diode Product specification Supersedes data of April 1992 1996 Mar 13 Philips Semiconductors Product specification AM band-switching diode FEATURES * Continuous reverse voltage: max. 20 V * Continuous forward current: max. 50 mA * Low diode capacitance: max. 2.5 pF * Low diode forward resistance: max. 1.2 . APPLICATION * Band switching in AM radio receivers. handbook, 4 columns BA423AL DESCRIPTION Leadless diode in a hermetically-sealed glass SOD80C SMD package with lead/tin plated metal discs at each end. k a MAM061 Fig.1 Simplified outline (SOD80C) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature PARAMETER MIN. - - -65 - MAX. 20 50 +150 150 V mA C C UNIT ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current see Fig.3 VR = 20V VR = 20 V; Tj = 125 C Cd rD diode capacitance diode forward resistance f = 1 MHz; VR = 3 V; see Fig.4 IF = 10 mA; f = 1 MHz; see Fig.5 100 5 2.5 1.2 nA A pF CONDITIONS IF = 50 mA; see Fig.2 MAX. 0.9 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 300 375 UNIT K/W K/W 1996 Mar 13 2 Philips Semiconductors Product specification AM band-switching diode GRAPHICAL DATA MBG292 BA423AL handbook, halfpage (1) (2) (3) 100 10 4 handbook, halfpage IR (nA) 10 3 MBG291 IF (mA) 50 10 2 10 0 0 0.5 1 V F (V) 1.5 1 0 50 100 Tj ( o C) 150 (1) Tj = 125 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. VR = 20 V. Solid line: maximum values. Dotted line: typical values. Fig.2 Forward current as a function of forward voltage. Fig.3 Reverse current as a function of junction temperature. handbook, halfpage 4 MBG297 handbook, halfpage 4 MBG298 Cd (pF) 3 rD () 3 2 2 1 1 0 0 4 8 12 V (V) 16 R 0 0 4 8 12 I (mA) 16 F f = 1 MHz; Tj = 25 C. f = 1 MHz; Tj = 25 C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. Fig.5 Diode forward resistance as a function of forward current; typical values. 1996 Mar 13 3 Philips Semiconductors Product specification AM band-switching diode PACKAGE OUTLINE BA423AL handbook, full pagewidth 1.60 O 1.45 0.3 3.7 3.3 0.3 MBA390 - 2 Dimensions in mm. The cathode is indicated by a red band. Fig.6 SOD80C. DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Mar 13 4 |
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